specifications
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TYPE | DESCRIPTION |
Mfr | Toshiba Electronic Devices and Storage Corporation |
Series | U-MOSIX-H |
Package | Tape & Reel (TR) |
Product Status | ACTIVE |
Package / Case | 8-PowerVDFN |
Mounting Type | Surface Mount |
Operating Temperature | 175°C |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
Rds On (Max) @ Id, Vgs | 2.9mOhm @ 35A, 10V |
Power Dissipation (Max) | 960mW (Ta), 81W (Tc) |
Vgs(th) (Max) @ Id | 2.1V @ 200µA |
Supplier Device Package | 8-SOP Advance (5x5) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs (Max) | ±20V |
Drain to Source Voltage (Vdss) | 30 V |
Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 15 V |