title
  • image of Single FETs, MOSFETs>TP65H300G4JSGB-TR
  • image of Single FETs, MOSFETs>TP65H300G4JSGB-TR
  • Part number TP65H300G4JSGB-TR
    Product classification Single FETs, MOSFETs
    description GANFET N-CH 650V 9.2A QFN5X6
    encapsulation Tape & Reel (TR)
    quantity 4142
    price $1.5600
    RoHS status NO
    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrTransphorm
    SeriesSuperGaN®
    PackageTape & Reel (TR)
    Product StatusACTIVE
    Package / Case8-PowerTDFN
    Mounting TypeSurface Mount
    Operating Temperature-55°C ~ 150°C (TJ)
    TechnologyGaNFET (Gallium Nitride)
    FET TypeN-Channel
    Current - Continuous Drain (Id) @ 25°C9.2A (Tc)
    Rds On (Max) @ Id, Vgs312mOhm @ 6.5A, 6V
    Power Dissipation (Max)41.6W (Tc)
    Vgs(th) (Max) @ Id2.8V @ 500µA
    Supplier Device Package8-PQFN (5x6)
    Drive Voltage (Max Rds On, Min Rds On)6V
    Vgs (Max)±10V
    Drain to Source Voltage (Vdss)650 V
    Gate Charge (Qg) (Max) @ Vgs3.5 nC @ 10 V
    Input Capacitance (Ciss) (Max) @ Vds400 pF @ 400 V