title
  • image of Single FETs, MOSFETs>TP65H050WS
  • image of Single FETs, MOSFETs>TP65H050WS
  • Part number TP65H050WS
    Product classification Single FETs, MOSFETs
    description GANFET N-CH 650V 34A TO247-3
    encapsulation Tube
    quantity 517
    price $17.6700
    RoHS status YES
    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrTransphorm
    Series-
    PackageTube
    Product StatusACTIVE
    Package / CaseTO-247-3
    Mounting TypeThrough Hole
    Operating Temperature-55°C ~ 150°C (TJ)
    TechnologyGaNFET (Cascode Gallium Nitride FET)
    FET TypeN-Channel
    Current - Continuous Drain (Id) @ 25°C34A (Tc)
    Rds On (Max) @ Id, Vgs60mOhm @ 22A, 10V
    Power Dissipation (Max)119W (Tc)
    Vgs(th) (Max) @ Id4.8V @ 700µA
    Supplier Device PackageTO-247-3
    Drive Voltage (Max Rds On, Min Rds On)12V
    Vgs (Max)±20V
    Drain to Source Voltage (Vdss)650 V
    Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
    Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 400 V