title
  • image of Single FETs, MOSFETs>SIR876BDP-T1-RE3
  • image of Single FETs, MOSFETs>SIR876BDP-T1-RE3
  • image of Single FETs, MOSFETs>SIR876BDP-T1-RE3
  • image of Single FETs, MOSFETs>SIR876BDP-T1-RE3
  • Part number SIR876BDP-T1-RE3
    Product classification Single FETs, MOSFETs
    description N-CHANNEL 100-V (D-S) MOSFET POW
    encapsulation Tape & Reel (TR)
    quantity 7585
    price $0.5200
    RoHS status YES
    specifications
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    TYPEDESCRIPTION
    MfrVishay / Siliconix
    SeriesTrenchFET® Gen IV
    PackageTape & Reel (TR)
    Product StatusACTIVE
    Package / CasePowerPAK® SO-8
    Mounting TypeSurface Mount
    Operating Temperature-55°C ~ 150°C (TJ)
    TechnologyMOSFET (Metal Oxide)
    FET TypeN-Channel
    Current - Continuous Drain (Id) @ 25°C13.6A (Ta), 51.4A (Tc)
    Rds On (Max) @ Id, Vgs10.8mOhm @ 10A, 10V
    Power Dissipation (Max)5W (Ta), 71.4W (Tc)
    Vgs(th) (Max) @ Id2.4V @ 250µA
    Supplier Device PackagePowerPAK® SO-8
    Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
    Vgs (Max)±20V
    Drain to Source Voltage (Vdss)100 V
    Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
    Input Capacitance (Ciss) (Max) @ Vds3040 pF @ 50 V