title
  • image of Single FETs, MOSFETs>SIR516DP-T1-RE3
  • image of Single FETs, MOSFETs>SIR516DP-T1-RE3
  • image of Single FETs, MOSFETs>SIR516DP-T1-RE3
  • image of Single FETs, MOSFETs>SIR516DP-T1-RE3
  • Part number SIR516DP-T1-RE3
    Product classification Single FETs, MOSFETs
    description N-CHANNEL 100 V (D-S) MOSFET POW
    encapsulation Tape & Reel (TR)
    quantity 6200
    price $0.7900
    RoHS status YES
    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrVishay / Siliconix
    SeriesTrenchFET®
    PackageTape & Reel (TR)
    Product StatusACTIVE
    Package / CasePowerPAK® SO-8
    Mounting TypeSurface Mount
    Operating Temperature-55°C ~ 150°C (TJ)
    TechnologyMOSFET (Metal Oxide)
    FET TypeN-Channel
    Current - Continuous Drain (Id) @ 25°C16.8A (Ta), 63.7A (Tc)
    Rds On (Max) @ Id, Vgs8mOhm @ 10A, 10V
    Power Dissipation (Max)5W (Ta), 71.4W (Tc)
    Vgs(th) (Max) @ Id4V @ 250µA
    Supplier Device PackagePowerPAK® SO-8
    Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
    Vgs (Max)±20V
    Drain to Source Voltage (Vdss)100 V
    Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
    Input Capacitance (Ciss) (Max) @ Vds1920 pF @ 50 V