specifications
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TYPE | DESCRIPTION |
Mfr | GaNPower |
Series | - |
Package | Tape & Reel (TR) |
Product Status | ACTIVE |
Package / Case | Die |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 150°C (TJ) |
Technology | GaNFET (Gallium Nitride) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 8A |
Vgs(th) (Max) @ Id | 1.4V @ 3.5mA |
Supplier Device Package | Die |
Drive Voltage (Max Rds On, Min Rds On) | 6V |
Vgs (Max) | +7.5V, -12V |
Drain to Source Voltage (Vdss) | 650 V |
Gate Charge (Qg) (Max) @ Vgs | 2.1 nC @ 6 V |
Input Capacitance (Ciss) (Max) @ Vds | 63 pF @ 400 V |