title
  • image of Single FETs, MOSFETs>G2K2P10D3E
  • image of Single FETs, MOSFETs>G2K2P10D3E
  • Part number G2K2P10D3E
    Product classification Single FETs, MOSFETs
    description MOSFET P-CH ESD 100V 10A DFN3*3-
    encapsulation Tape & Reel (TR)
    quantity 5170
    price $0.5800
    RoHS status YES
    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrGoford Semiconductor
    Series-
    PackageTape & Reel (TR)
    Product StatusACTIVE
    Package / Case8-PowerVDFN
    Mounting TypeSurface Mount
    Operating Temperature-55°C ~ 150°C (TJ)
    TechnologyMOSFET (Metal Oxide)
    FET TypeP-Channel
    Current - Continuous Drain (Id) @ 25°C10A (Tc)
    Rds On (Max) @ Id, Vgs210mOhm @ 6A, 10V
    Power Dissipation (Max)31W (Tc)
    Vgs(th) (Max) @ Id2.5V @ 250µA
    Supplier Device Package8-DFN (3.15x3.05)
    Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
    Vgs (Max)±20V
    Drain to Source Voltage (Vdss)100 V
    Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
    Input Capacitance (Ciss) (Max) @ Vds1668 pF @ 50 V