title
  • image of Single FETs, MOSFETs>FBG30N04CC
  • image of Single FETs, MOSFETs>FBG30N04CC
  • image of Single FETs, MOSFETs>FBG30N04CC
  • image of Single FETs, MOSFETs>FBG30N04CC
  • Part number FBG30N04CC
    Product classification Single FETs, MOSFETs
    description GAN FET HEMT 300V4A COTS 4FSMD-C
    encapsulation Bulk
    quantity 200
    price $318.0500
    RoHS status NO
    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrEPC Space
    Series-
    PackageBulk
    Product StatusACTIVE
    Package / Case4-SMD, No Lead
    Mounting TypeSurface Mount
    Operating Temperature-55°C ~ 150°C (TJ)
    TechnologyGaNFET (Gallium Nitride)
    FET TypeN-Channel
    Current - Continuous Drain (Id) @ 25°C4A (Tc)
    Rds On (Max) @ Id, Vgs404mOhm @ 4A, 5V
    Vgs(th) (Max) @ Id2.8V @ 600µA
    Supplier Device Package4-SMD
    Drive Voltage (Max Rds On, Min Rds On)5V
    Vgs (Max)+6V, -4V
    Drain to Source Voltage (Vdss)300 V
    Gate Charge (Qg) (Max) @ Vgs2.6 nC @ 5 V
    Input Capacitance (Ciss) (Max) @ Vds450 pF @ 150 V