specifications
PDF(1)
| TYPE | DESCRIPTION |
| Mfr | EPC |
| Series | eGaN® |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 11A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 2.5mA |
| Supplier Device Package | Die |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 576 pF @ 50 V |