title
  • image of FET, MOSFET Arrays>EPC2108
  • image of FET, MOSFET Arrays>EPC2108
  • image of FET, MOSFET Arrays>EPC2108
  • image of FET, MOSFET Arrays>EPC2108
  • Part number EPC2108
    Product classification FET, MOSFET Arrays
    description GANFET 3 N-CH 60V/100V 9BGA
    encapsulation Tape & Reel (TR)
    quantity 1173
    price $0.7900
    RoHS status YES
    specifications
    PDF(1)
    PDF(2)
    TYPEDESCRIPTION
    MfrEPC
    SerieseGaN®
    PackageTape & Reel (TR)
    Product StatusOBSOLETE
    Package / Case9-VFBGA
    Mounting TypeSurface Mount
    Configuration3 N-Channel (Half Bridge + Synchronous Bootstrap)
    Operating Temperature-40°C ~ 150°C (TJ)
    TechnologyGaNFET (Gallium Nitride)
    Drain to Source Voltage (Vdss)60V, 100V
    Current - Continuous Drain (Id) @ 25°C1.7A, 500mA
    Input Capacitance (Ciss) (Max) @ Vds22pF @ 30V, 7pF @ 30V
    Rds On (Max) @ Id, Vgs190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
    Gate Charge (Qg) (Max) @ Vgs0.22nC @ 5V, 0.044nC @ 5V
    Vgs(th) (Max) @ Id2.5V @ 100µA, 2.5V @ 20µA
    Supplier Device Package9-BGA (1.35x1.35)