specifications
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TYPE | DESCRIPTION |
Mfr | EPC |
Series | eGaN® |
Package | Tape & Reel (TR) |
Product Status | ACTIVE |
Package / Case | 9-VFBGA |
Mounting Type | Surface Mount |
Configuration | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 1.7A, 500mA |
Input Capacitance (Ciss) (Max) @ Vds | 16pF @ 50V, 7pF @ 50V |
Rds On (Max) @ Id, Vgs | 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V |
Gate Charge (Qg) (Max) @ Vgs | 0.16nC @ 5V, 0.044nC @ 5V |
Vgs(th) (Max) @ Id | 2.5V @ 100µA, 2.5V @ 20µA |
Supplier Device Package | 9-BGA (1.35x1.35) |