title
  • image of Single FETs, MOSFETs>CGD65B200S2-T13
  • image of Single FETs, MOSFETs>CGD65B200S2-T13
  • Part number CGD65B200S2-T13
    Product classification Single FETs, MOSFETs
    description 650V GAN HEMT, 200MOHM, DFN5X6.
    encapsulation Tape & Reel (TR)
    quantity 4555
    price $4.5500
    RoHS status YES
    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrCambridge GaN Devices
    SeriesICeGaN™
    PackageTape & Reel (TR)
    Product StatusACTIVE
    Package / Case8-PowerVDFN
    Mounting TypeSurface Mount
    Operating Temperature-55°C ~ 150°C (TJ)
    TechnologyGaNFET (Gallium Nitride)
    Current - Continuous Drain (Id) @ 25°C8.5A (Tc)
    Rds On (Max) @ Id, Vgs280mOhm @ 600mA, 12V
    FET FeatureCurrent Sensing
    Vgs(th) (Max) @ Id4.2V @ 2.75mA
    Supplier Device Package8-DFN (5x6)
    Drive Voltage (Max Rds On, Min Rds On)9V, 20V
    Vgs (Max)+20V, -1V
    Drain to Source Voltage (Vdss)650 V
    Gate Charge (Qg) (Max) @ Vgs1.4 nC @ 12 V