title
  • image of Bipolar RF Transistors>BFU550WX
  • image of Bipolar RF Transistors>BFU550WX
  • Part number BFU550WX
    Product classification Bipolar RF Transistors
    description BFU550W - NPN WIDEBAND SILICON R
    encapsulation Bulk
    quantity 7239
    price $0.3700
    RoHS status NO
    specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrNXP Semiconductors
    Series-
    PackageBulk
    Product StatusOBSOLETE
    Package / CaseSC-70, SOT-323
    Mounting TypeSurface Mount
    Transistor TypeNPN
    Operating Temperature-40°C ~ 150°C (TJ)
    Gain18dB
    Power - Max450mW
    Current - Collector (Ic) (Max)50mA
    Voltage - Collector Emitter Breakdown (Max)12V
    DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 15mA, 8V
    Frequency - Transition11GHz
    Noise Figure (dB Typ @ f)1.3dB @ 1.8GHz
    Supplier Device PackageSC-70